Epitaxial growth of AlN and GaN on Si(111) by plasma-assisted molecular beam epitaxy - Concepedia

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Epitaxial growth of AlN and GaN on Si(111) by plasma-assisted molecular beam epitaxy

36

Citations

23

References

1999

Year

H. P. D. Schenk, G. Kipshidze, V. Lebedev, S. Shokhovets, R. Goldhahn, J. Kräuβlich, A. Fissel, W. Richter

Journal of Crystal Growth

Materials EngineeringAluminium NitrideMaterials ScienceEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceMolecular Beam EpitaxyEpitaxial Growth

References

	Year	Citations

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