Improving the conversion efficiency of Cu2ZnSnS4 solar cell by low pressure sulfurization

Abstract

Cu2ZnSnS4 thin films have been prepared by the sol-gel sulfurization method on Mo-coated substrates, and the comparative studies between the atmospheric pressure sulfurization and low pressure sulfurization was carried out. The Cu2ZnSnS4 film sulfurized at low pressure exhibits larger grain size, thinner MoS2 layer, and free of SnS secondary phase, but more ZnS on surface. The device efficiency of 4.1% using Cu2ZnSnS4 absorber from atmospheric pressure sulfurization is improved to 5.7% using that from low pressure sulfurization via the boost of open-circuit and fill factor.