Surface Oxidation Kinetics of GaAs Oxide Growth by Liquid Phase Chemical-Enhanced Technique

Abstract

The initial stage of GaAs oxidation by a near-room-temperature liquid phase chemical-enhanced technique has been studied. Based on the experimental results of X-ray photoelectron spectroscopy, a complete model illustrating the chemical composition of the grown oxide film has been established. To clarify the kinetics of oxide growth in a liquid solution in more detail, we have also performed selective oxidation and surface profile measurements. Unusual features of the oxide growth kinetics have been observed by investigating the physical structure of oxide at the edge of mask in the selective oxidation.