Attaching Organic Semiconductors to Gate Oxides:  In Situ Assembly of Monolayer Field Effect Transistors

George S. Tulevski, Qian Miao, Masafumi Fukuto, Rebecca Abram, B. M. Ocko, Ronald Pindak, Michael L. Steigerwald, Cherie R. Kagan, Colin Nuckolls

Journal of the American Chemical Society · 2004 · 137 citations · 29 references

Concepts

Abstract

This study unveils a new tetracene derivative that forms dense, upright monolayers on the surface of aluminum oxide. These monolayers spontaneously self-organize into the active layer in nanoscale field-effect transistor devices when aluminum oxide is used as the dielectric layer. This method gives high yields of working devices that have source-drain distances that are less than 60 nm, thereby providing a method to electrically probe the monolayer assemblies formed from approximately 10 zeptomoles of material (approximately 104 molecules). Moreover, this study delineates a new avenue for research in thin-film organic transistors where the active molecules are linked to the dielectric surface to form a monolayer transistor.

References

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