Characterization of a-SiC:H Films Deposited by RF Plasma CVD

Abstract

The effects of annealing temperature on the structure of hydrogenated amorphous silicon carbide (a-SiC:H) films prepared by RF plasma CVD were investigated by using X-ray diffraction, UV-VIS spectrophotometer and atomic force microscopy techniques. It was found that an annealing process results in structural rearrangement. The amorphous phase transforms into the crystalline β-SiC phase at an annealing temperature of approximately 900°C.