Ferromagnetic effect of a Mn delta layer in the GaAs barrier on the spin polarization of carriers in an InGaAs/GaAs quantum well

Abstract

The polarization properties of the luminescence of an undoped InGaAs quantum well in InGaAs/GaAs het-erojunctions with a Mn delta layer in the GaAs barrier have been studied in a wide range of temperatures and magnetic fields. It has been found that the s , p - d exchange interaction of carriers in the quantum well with Mn ions in the δ layer leads to the ferromagnetic behavior of both the Zeeman splitting and spin polarization of the carriers with a Curie temperature typical of the Mn delta layer in the GaAs barrier. The saturation of the spin polarization of holes associated with their Fermi degeneracy has been observed at low temperatures ( T < 20 K).