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Highly tetrahedral amorphous carbon films with low stress

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1996

Year

Abstract

We have deposited boronated highly tetrahedral amorphous carbon (ta-C:B) films with low stress using a filtered cathodic vacuum arc. The sp3 fraction, hardness, and resistivity were measured as a function of the ion energy and were found to reach a maximum above 50 eV for B concentrations of 2% and 4%. The most significant result we found was that highly tetrahedral a-C:B film (sp3≊80%) with low stress (1–3 GPa) with B concentrations up to 4% could be obtained. The B in the films was found to be predominantly (≊75%) sp2 bonded. Additionally, the stress in the films did not vary with the ion energy or sp3 fraction unlike in regular ta-C films.