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Initial growth mechanism of <i>a/b</i>-axis oriented YBa2Cu3O7−<i>y</i> film prepared by liquid phase epitaxy
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1996
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Materials ScienceMaterial AnalysisEngineeringPhysicsCrystal Growth TechnologySurface ScienceApplied PhysicsSuperconductivityCondensed Matter PhysicsInitial Growth MechanismThin Film Process TechnologyLiquid Phase EpitaxyThin FilmsMolecular Beam EpitaxyEpitaxial GrowthYbco FilmThin Film Processing
The a/b-axis oriented YBa2Cu3O7−y (YBCO) films were fabricated by liquid phase epitaxy (LPE) on NdGaO3 (110) single-crystalline substrates using a modified top-seeded solution growth method. The x-ray diffraction measurement, and transmission electron microscopic observation showed the epitaxial growth of YBCO film on the substrate. Scanning electron microscopic observation revealed the epitaxy of YBCO on the substrate and an initial growth mechanism of a/b-axis oriented YBCO film by LPE. The film growth consists of the following stages; (1) nucleation and island growth, (2) lateral growth of island, and (3) layer formation due to coalescence of island.