Variation of the mobility and the two-dimensional electron gas concentration with indium composition in δ-doped GaAs/In<i>x</i>Ga1−<i>x</i>As/GaAs pseudomorphic structures

Abstract

The electron mobility and the two-dimensional electron gas (2DEG) concentration in different indium compositions (0.1&amp;lt;x&amp;lt;0.6) δ-doped GaAs/InxGa1−xAs/GaAs pseudomorphic structures grown by low-pressure metalorganic chemical vapor deposition are studied. The electron mobilities of a δ-doped GaAs layer are comparable to those of previous reports. Furthermore, the maximum mobility (5500 and 33 000 cm2/V s at 300 and 77 K, respectively) of the proposed pseudomorphic structure appears at x=0.37. Taking into account of strain and quantum effects, the variation trends of calculated 2DEG concentrations are in good agreement with the experimental results.