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Characterization of heavily carbon-doped GaAs with a hole concentration of the order of 1021 cm−3 grown by metalorganic molecular beam epitaxy and its application to InGaP/GaAs heterojunction bipolar transistors

SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineeringApplied PhysicsSemiconductor MaterialsCarbon-doped GaasMolecular Beam EpitaxyCompound SemiconductorHole Concentration