The fabrication of single heterojunction AlGaAs/InGaP electroluminescent diodes

Abstract

High quality GaAs/AlxGa1−xAs/In0.5Ga0.5P single heterostructure electroluminescent devices have been fabricated by liquid-phase epitaxy. Three different compositions (x=0.45, 0.58, and 0.85) of AlxGa1−xAs layers were made to compare their properties. Diodes fabricated from these heterostructures have been characterized by electron beam induced current, electroluminescence, quantum efficiency, output power, and current-voltage measurements. Emission peak wavelengths and full width at half maximum values of the light emitting diodes are, respectively, 652.5, 654.4, and 652.8 nm, and 67, 67, and 75 meV. The peak wavelengths of the light emitting diode shift 6 meV towards the lower-energy side compared to the photoluminescent peak wavelength of the same electron concentration in the Te-doped In0.5Ga0.5P layer. For most light emitting diodes, output powers and efficiency are in the range of 50–100 μW and 0.062%–0.1%, respectively.