Heteroepitaxially grown diamond on a <i>c</i>-BN {111} surface

Abstract

A continuous diamond film with a thickness of about 10 μm was grown on {111} faces of a single-crystal cubic boron nitride (c-BN) by hot-filament chemical vapor deposition (CVD). Cross-sectional selected area diffraction pattern (SADP) and high resolution electron microscopy (HREM) of the diamond/c-BN interface show that the diamond has a parallel orientation relationship with respect to the substrate.