A molecular memory device formed by HfO2 encapsulation of redox-active molecules

Abstract

Solid state metal-insulator-molecule-metal (MIMM) devices were fabricated by encapsulating a redox-active molecular layer between a metal substrate and a dielectric thin film of atomic layer deposition (ALD) hafnium dioxide (HfO2). Redox properties of molecules are preserved after atomic layer deposition. The leakage current of devices is greatly improved by incorporating the ALD HfO2 thin layer. Capacitance measurements of these MIMM devices show a large frequency dispersion indicating the charging and discharging of the molecular layer.