Epitaxial growth of CoSi2 on both (111) and (100) Si substrates by multistep annealing of a ternary Co/Ti/Si system

Abstract

Formation of CoSi2 films by the reaction of ternary Co/Ti/Si system has been investigated. Ti and Co films were sequentially deposited on Si substrates by ion beam sputtering. It succeeded in the growth of epitaxial single-crystalline CoSi2 films on both Si(111) and Si(100) substrates through a multistep annealing process with temperatures from 550 to 900 °C in a nitrogen environment. A thin layer of TiN was formed on top of the epitaxial CoSi2. The values of Rutherford backscattering spectrometry/channeling minimum yield χmin for the epitaxial CoSi2 films were in the range of 10%–14%. The epitaxial CoSi2 grown on Si(111) was found to be composed of type B.