High-Performance Transparent AZO TFTs Fabricated on Glass Substrate

Abstract

High-performance transparent low-temperature top-gate type aluminum doped zinc oxide (AZO) thin-film transistors (TFTs) ( <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$W/L=100$</tex></formula> or 10 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\mu{\rm m}$</tex></formula> ) are successfully fabricated on glass substrate. All the process temperature is below 100 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$^{\circ}{\rm C}$</tex></formula> . For <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex Notation="TeX">$V_{G}=-2$</tex></formula> to 5 V, the TFTs using sputtering deposit AZO layer at room temperature as channel layer exhibits excellent properties, such as a saturation mobility <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\mu_{s}$</tex> </formula> of 285 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">${\rm cm}^{2}/{\rm V}\cdot{\rm s}$</tex></formula> , a linear field effect mobility <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\mu_{l}$</tex></formula> of 143 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex Notation="TeX">${\rm cm}^{2}/{\rm V}\cdot{\rm s}$</tex></formula> , a threshold voltage <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex Notation="TeX">$V_{th}$</tex></formula> of 0.9 V, a steep subthreshold swing of 108 mV/decade, a low off-state current value <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$I_{\rm off}$</tex></formula> of <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$5\times 10^{-13}~{\rm A}$</tex></formula> , a high ON/OFF ratio of <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$2\times 10^{9}$</tex> </formula> and a high transmittance of 82.5%. The results highlight that excellent device performance can be realized in AZO TFTs. Note that this is the best performance of AZO TFT ever reported.