Publication | Closed Access
Improvement of electron injection in inverted bottom-emission blue phosphorescent organic light emitting diodes using zinc oxide nanoparticles
98
Citations
19
References
2010
Year
EngineeringOrganic ElectronicsZinc OxideChemistryLuminescence PropertyElectron InjectionZno NpsChemical EngineeringPhosphorescence ImagingZno Nps LayerNanotechnologyOxide ElectronicsNew Lighting TechnologyUpconversion LuminescenceWhite OledSolid-state LightingApplied PhysicsOptoelectronicsPhosphorescence
We fabricated highly efficient iridium(III) bis[(4,6-di-fluorophenyl)-pyridinato-N,C2′] picolinate doped inverted bottom-emission blue phosphorescent organic light-emitting diodes, with an electron injection layer of zinc oxide (ZnO) nanoparticles (NPs). The ZnO NPs layer lowers the turn-on voltage by about 4 V and significantly enhances the efficiency. The device with ZnO NPs shows peak efficiencies of 16.5 cd/A and 8.2%, about three times higher than those of the device without ZnO NPs. Since the ZnO NPs layer has a wide band gap, good electron transporting properties and low work function, it can be utilized as an effective electron injection layer with good transparency.
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