Influence of growth temperature on the stoichiometry of InSb nanowires grown by vapor phase transport

Abstract

We report on the influence of growth parameters on the stoichiometry of indium antimonide nanowires grown by vapor phase transport. Using electron microscopy and composition analysis, we show that there is an optimum growth temperature window for growing stoichiometric indium antimonide (InSb) nanowires. The choice of the metal catalyst, evaporation and growth temperature are all critical parameters affecting the morphology and stoichiometry of the growing crystal. By controlling the growth temperature, it was possible to grow either stoichiometric InSb nanowires or In nanowires that contained no Sb within detectable limits. Electrical transport measurements of single InSb nanowires with two ohmic contacts demonstrate n-type conduction persisting from room temperature to 15 K.