Dislocation-related luminescence in single-crystal silicon subjected to silicon ion implantation and subsequent annealing

Abstract

Implantation of silicon ions with an energy of 100 keV at a dose of 1 × 1017 cm−2 into n-type floatzone Si does not lead to the formation of an amorphous layer. Subsequent annealing in a chlorine-containing atmosphere at 1100°C gives rise to dislocation-related luminescence. The intensity of the dominant D1 line peaked at a wavelength of ∼1.54 μm grows as the annealing time is increased from 15 to 60 min.