Effect of natural aging on photoluminescence of porous silicon

Abstract

The influence of natural aging on the intensity and position of the photoluminescence (PL) peak in n-type porous silicon (por-Si) has been studied. Changes in the phase composition and relative content of the amorphous and oxide phases in por-Si during aging were determined by simulating the spectra of Si L 2,3 ultrasoft X-ray emission based on the reference spectra of the corresponding phases.