Progress in Natural Science Materials International · 2013 · 68 citations · 27 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsPhotovoltaic MaterialsSemiconductor Thin FilmsSolar Cell MaterialsSolar CellsThin Film AnnealingThin-film MaterialsAbsorber MaterialsCurrent DensityEnergy Conversion EfficiencyFill FactorOpen-circuit VoltagePreferred OrientationShort-circuit CurrentThin-film Solar Cells
Cu(In,Ga)Se2 (CIGS) thin films were prepared by directly sputtering Cu(In,Ga)Se2 quaternary target consisting of Cu:In:Ga:Se=25:17.5:7.5:50 at%. The composition and structure of CIGS layers have been investigated after annealing at 550 °C under vacuum and a Se-containing atmosphere. The results show that recrystallization of the CIGS thin film occurs and a chalcopyrite structure with a preferred orientation in the (112) direction was obtained. The CIGS thin film annealed under vacuum exhibits a loss of a portion of Se, while the film annealed under Se-containing atmosphere reveals compensation of Se. Several solar cells with three different absorber thicknesses were fabricated using a soda lime glass/Mo/CIGS/CdS/i-ZnO/ZnO:Al/Al grid stack structure. The highest conversion efficiency of 9.65% with an open circuit voltage of 452.42 mV, short circuit current density of 32.16 mA cm−2 and fill factor of 66.32% was obtained on a 0.755 cm2 cell area.
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Shigeru Niki, Miguel Á. Contreras, Ingrid Repins et al. · Progress in Photovoltaics Research and Applications · 2010 · 446 citations
Natural Sciences, Materials Engineering, Materials Science +11
Low cost processing of CIGS thin film solar cells
M. Kaelin, D. Rudmann, Ayodhya N. Tiwari · Solar Energy · 2004 · 357 citations
Natural Sciences, Materials Engineering, Materials Science +14