Effects of Implantation Temperature on Lattice Location of Tellurium Implanted in Gallium Arsenide

Abstract

1 or 1.5 MeV He+ channeling techniques were used to study the lattice location and its annealing behavior of ion-implanted Te in GaAs single crystals as a function of implantation temperature. Channeling angular dips for He+ backscattering from both GaAs and Te atoms were measured. The relative amount of lattice disorder introduced by the implantation was also measured. It was concluded that most of room temperature implanted Te located on sites displaced by 0.34–0.49 Å from the lattice rows after annealing at 550°C, while 72–100% of Te implanted above 200°C located exactly on the substitutional sites. It was observed that the lattice disorder remaining in the crystal after implantation decreased sharply at around 200°C implantation. An anneal stage for the lattice location and lattice disorder was found to exist in the temperature range between 100°C and 200°C.