Recollections of MCT work in the UK at Malvern and Southampton

Abstract

MCT was discovered in the UK in 1958. This paper reviews key developments in the research and development of the material and devices from the early days to the present. The growth of the material by Bridgman, LPE and MOVPE methods is described. Fabrication techniques are described for SPRITES, two dimensional and long linear "loophole" diode arrays and the more recent wafer scale technologies for very large arrays. The use of multilayer heterostructures in Auger-suppressed diodes, two-colour detectors and negative luminescence devices is outlined. A brief glimpse of the future potential for the growth of MCT directly onto silicon circuits is given.