Room temperature multiferroicity in Ga0.6Fe1.4O3:Mg thin films

Abstract

We report on the multiferroic behavior of 2%-magnesium-doped Ga0.6Fe1.4O3 thin film at room temperature. The sample was grown by pulsed laser deposition on a Pt-coated Yttrium-Stabilized Zirconia substrate. Magnetic measurements indicate a net magnetization of 105 emu/cm3 at 295 K, and the persistence of magnetic ordering above room temperature. Ferroelectric measurements show clear polarization switching with negligible contribution from leakage currents, with a polarization of 0.2 μC/cm−2 and a coercive field of 133 kV/cm. Scanning probe microscopy confirms the low leakage current and detects a stable piezoelectric signal. This could open original perspectives for the application of single-phased multiferroic systems.