PLZT thin-film waveguides

Abstract

PLZT thin-film channel waveguides have been successfully formed in ridges by an ion-beam etching process. The electrooptic Kerr coefficients of the waveguides have been newly obtained. We have determined that the electrooptic coefficients R11′ and R12′ were 0.1–0.2 × 10−16 (m/V)2 and 0.01 × 10−16 (m/V)2, respectively, by Mach-Zehnder interferometric measurement. It was confirmed that PLZT channel waveguides were much more efficient than conventional Ti-diffused LiNbO3 waveguides.