Publication | Open Access
Electronic Properties of Isosymmetric Phase Boundaries in Highly Strained Ca‐Doped BiFeO<sub>3</sub>
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Citations
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References
2014
Year
Materials ScienceMagnetismMultiferroicsSpintronicsBismuth FerriteEngineeringPhysicsFerroelectric ApplicationFerroelasticsTopological HeterostructuresApplied PhysicsCondensed Matter PhysicsQuantum MaterialsMagnetic Topological InsulatorElectronic PropertiesAnisotropic Electronic ConductivityIsosymmetric Phase BoundariesSolid-state Physic
Anisotropic electronic conductivity is reported for isosymmetric phase boundaries in highly strained bismuth ferrite, which are the (fully epitaxial) connecting regions between two different structural variants of the same material. Strong correlations between nanoscale phase transitions and the local electronic conductivity are found. A high degree of control over their electronic properties can be attained through non-local electrical switching.
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