SID Symposium Digest of Technical Papers · 2009 · 14 citations · 3 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsDisplay TechnologiesLight-emitting DiodesOrganic SemiconductorsRare-earth-doped MaterialsSemiconductor Device MaterialsConnector DesignLight-emitting DevicesOrganic Light-emitting Diodes
Abstract A nonmetallic connector has been developed for high‐efficiency tandem white architecture. Forming the “N” type layer using NDN‐26 doped into NET‐18 and inserting an organometallic thin layer between the “N” and “P” layers results in a high‐performance connector. An efficiency of 33 cd/A has been achieved at 6.7 V, 1000 cd/m 2 and 10000K color temperature in a fluorescent based tandem emitter. This >15% EQE device also demonstrates a half‐life of ∼80,000 h at 1000 cd/m 2 .
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