Quantum dot vertical-cavity surface-emitting laser with a dielectric aperture

Abstract

Data are presented on an oxide-confined vertical-cavity surface-emitting laser that uses a quantum dot active region. The laser is grown by molecular beam epitaxy, with the quantum dot active region formed from a five monolayer deposition of In0.50Ga0.35Al0.15As. Lasing occurs at wavelengths corresponding to quantum dot transitions, with a room temperature pulsed threshold as low as 560 μA for a 7 μm diameter oxide aperture.