Charge modulation infrared spectroscopy of rubrene single-crystal field-effect transistors

Abstract

Polarized absorption spectra of hole carriers in rubrene single crystal field-effect transistors were measured in the infrared region (725–8000 cm−1) by charge modulation spectroscopy. The absorptions, including the superimposed oscillatory components due to multiple reflections within thin crystals, monotonically increased with decreasing frequency. The spectra and their polarization dependences were well reproduced by the analysis based on the Drude model, in which the absorptions due to holes in rubrene and electrons in the gate electrodes (silicon), and multiple reflections were fully considered. The results support the band transport of hole carriers in rubrene.