Far infrared spectroscopy of thin epitaxial layers of GaN deposited by molecular beam epitaxy on GaP substrates - Concepedia

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Far infrared spectroscopy of thin epitaxial layers of GaN deposited by molecular beam epitaxy on GaP substrates

11

Citations

11

References

1996

Year

G. Mirjalili, T. Dumelow, T.J. Parker, S. Farjami Shayesteh, T.S. Cheng, C. T. Foxon, L. C. Jenkins, D.E. Lacklinson

Infrared Physics & Technology

Materials ScienceWide-bandgap SemiconductorEngineeringInfrared SpectroscopyApplied PhysicsGap SubstratesAluminum Gallium NitrideGan Power DeviceMolecular Beam Epitaxy

References

	Year	Citations

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