Low-loss single-mode GaAs/AlGaAs optical waveguides grown by organometallic vapor phase epitaxy

Abstract

We report the fabrication and the characterization of low-loss, single-mode GaAs/AlGaAs ridge waveguides. The waveguides were grown by organometallic vapor phase epitaxy and were characterized at 1.52 μm wavelength. Their propagation losses were evaluated by measuring the finesse of the Fabry–Perot waveguide resonators formed by cleaving two opposite ends of these waveguides. Losses as low as 0.15 dB/cm were measured for single-mode waveguides, which is the lowest value reported to date for single-mode semiconductor waveguides. Such low-loss waveguides should be useful in guided-wave components for integrated optoelectronics.