An analysis of the causes of the pulse height defect and its mass dependence for heavy-ion silicon detectors

Statistics of the Recombinations of Holes and Electrons

W. Shockley, W. T. Read · Physical Review · 1952 · 6.4K citations

Engineering, Electrical Engineering, Recombination +15

Physics and chemistry of fission

R.H. Rodríguez-Pasqués · The International Journal of Applied Radiation and Isotopes · 1966 · 526 citations

Natural Sciences, Nuclear Engineering, Physics +10

Pulse-height defects for heavy ions in a silicon surface-barrier detector

B. D. Wilkins, M. J. Fluss, S. Kaufman et al. · Nuclear Instruments and Methods · 1971 · 144 citations

Engineering, Electrical Engineering, Materials Science +16

<i>Radiation Damage in Crystals</i>

L.T. Chadderton, M. E. Straumanis · Physics Today · 1966 · 135 citations

Natural Sciences, Materials Science, Physics +12

The field-dependence of carrier mobility in silicon and germanium

A C Prior · Journal of Physics and Chemistry of Solids · 1960 · 126 citations

Engineering, Materials Science, Physics +12