Journal of Physics C Solid State Physics · 1981 · 33 citations · 5 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsOptoelectronicsSolid State PhysicsConductive MaterialsElectrical ConductivityElectronic Band StructureOptical Properties Of SolidsSemiconductor PhysicsCharge State DeterminationCharge State DistributionsCharge-state DistributionConduction BandEnergy Band GapPhotoconductivityValence BandValence-band Spectroscopy
Presents the low-temperature deep-level photoconductivity spectra of a wide range of n-type and semi-insulating Fe-doped InP crystals. The results differ in important respects from some recently reported photoconductivity work and conclusively demonstrate that Fe2+ rather than Fe+ is the stable charge state in n-type material. The electron ionisation threshold energy from the Fe2+ state to the lowest conduction band at 0.65 eV is found in all the samples studied. Only the semi-insulating show a strong photoconductivity threshold at 1.15 eV. This feature is absent in n-type InP(Fe). The authors tentatively assign this structure to an Fe-related level (Fe3+) 1.15 eV below the conduction band-edge.
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Optical and ESR analysis of the Fe acceptor in InP
W. Koschel, U. Kaufmann, S. G. Bishop · Solid State Communications · 1977 · 92 citations
Semi-insulating properties of Fe-doped InP
Osamu Mizuno, H. Watanabe · Electronics Letters · 1975 · 84 citations
Resonance photoconductivity in Fe-doped InP
D. C. Look · Solid State Communications · 1980 · 14 citations