A linear CMOS SOI SP14T antenna switch for cellular applications

Abstract

A high-power low-loss antenna switch is designed and fabricated in a 180nm SOI CMOS process. The RF switch is intended for mobile front ends which cover Quad band GSM and multiple WCDMA and LTE bands. The prototype SP14T has demonstrated a 0.1dB compression point of 28dBm at all cellular bands. The low loss and high linearity are made possible by the distributed RF architecture along with the on-chip multiple domain voltage generation which includes a negative voltage generator. The low loss, high dynamic range and superior isolation of this switch makes it an ideal candidate for next generation smart phones.