Ga₂O₃ and GaN Semiconductor Hollow Spheres

Abstract

Carbon spheres are used as templates to prepare semiconductor hollow spheres of Ga2O3 (depicted) and GaN. The thickness and uniformity of the final products are predetermined by the thickness of the active layer of the carbon spheres. The diameter of the spheres can be adjusted in the range of 100 nm to 1.5 μm, which covers the band gaps in the spectral regime from UV to near infrared.