WSiN/SiO2 capped annealing for Si-implanted GaAs

Abstract

A new cap annealing method using WSiN/SiO2 multilayer film for Si-implanted GaAs has been developed. The post-implant annealing was performed by varying the SiO2 thickness in Ar/H2 atmosphere without As overpressure. The annealed layers were characterized by Hall effect, capacitance-voltage, secondary ion mass spectrometry, and 77-K photoluminescence measurements. The WSiN/SiO2 capped annealing method was found to offer high-activation efficiency without the deep tailing of carrier concentration profiles. Enhanced activation efficiency with the increase in SiO2 thickness was also observed for this annealing method.