Growth parameter dependence of background doping level in GaAs, In0.53Ga0.47As and AlxGa1−xAs grown by metalorganic molecular beam epitaxy - Concepedia

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Growth parameter dependence of background doping level in GaAs, In0.53Ga0.47As and AlxGa1−xAs grown by metalorganic molecular beam epitaxy

35

Citations

6

References

1989

Year

J.L. Benchimol, F. Alexandre, Yang Gao, F. Alaoui

Journal of Crystal Growth

Materials ScienceEngineeringApplied PhysicsGrowth Parameter DependenceMolecular Beam EpitaxyEpitaxial Growth

References

	Year	Citations

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