Japanese Journal of Applied Physics · 1983 · 82 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesLight-emitting DiodesOptical Properties Of SemiconductorsOptical SourcesOptoelectronic DevicesSemiconductor LasersCarrier Recombination DynamicsLight-emitting DevicesModes Of OperationPhoton EmissionPhoton Emission MechanismsSemiconductor Laser DiodesSemiconductor Laser Rate EquationsSingle-photon Emission
A new field effect semiconductor laser or light emitting device is proposed and analysed, in which the photon emission rate is modulated by the gate voltage mainly through changes in spatial distributions of the carriers. The switching speed in the device is expected to be free from recombination lifetime limitation in specific operation modes.
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