A floating-gate MOSFET with tunneling injector fabricated using a standard double-polysilicon CMOS process

Abstract

A floating-gate MOSFET which is programmable in both directions by Fowler-Nordheim tunneling and is fabricated using an inexpensive standard 2- mu m double-polysilicon CMOS technology is discussed. Tunneling occurs at a crossover of polysilicon 1 with polysilicon 2. Device layout and basic device characteristics are presented, and recommendations for efficient programming are given. This is the first floating-gate FET with a tunneling injector fabricated in standard technology that has close to symmetric programming characteristics for both charging and discharging of the gate.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>