A Perpendicular Spin Torque Switching based MRAM for the 28 nm Technology Node

Abstract

We report on a novel spin torque select MRAM with perpendicular anisotropy (P-ST-MRAM). The P-ST concept offers superior scalability performance at the 28 nm technology node compared to the conventional in-plane spin torque MRAM (I-ST-MRAM). The critical programming currents (~ 30 muA) are low, allowing a cell layout as small as 6 F2. In addition, data retention is significantly better for P-ST enabling a non-volatile, high density product for the 28 nm node. Estimations on write performance promise high write endurance and high write speed. Circuit simulations with improved read circuit demonstrate array read access time ~ 30 ns at sensing currents ~ 10 muA.