Publication | Closed Access
A two-dimensional analytical analysis of subthreshold behavior to study the scaling capability of nanoscale graded channel gate stack DG MOSFETs
62
Citations
14
References
2009
Year
Device ModelingElectrical EngineeringScaling CapabilityEngineeringPhysicsTechnology ScalingNanoelectronicsBias Temperature InstabilityApplied PhysicsTwo-dimensional Analytical AnalysisSubthreshold BehaviorMicroelectronicsSemiconductor Device
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