Effect of Cl2∕Ar dry etching on p-GaN with Ni∕Au metallization characterization

Abstract

This work investigates the effect of Cl2∕Ar dry etching on p-GaN. The root-mean-square (rms) surface roughness is measured, and the depth display (Bearing analysis) is monitored. The current-voltage characteristics of etched p-GaN with Ni(20nm)∕Au(20nm) metallization are studied. Experimental results indicate that the etching rate does not increase significantly with the Cl2 flow rate at a constant power or chamber pressure. The Bearing ratio data exhibit a much stronger variation with etch conditions, the rms displays the same trend but to a lesser extent.