Detection of SiH(<i>X</i> 2Π) fundamental and hot band transitions by diode laser absorption spectroscopy

Abstract

Infrared absorption spectra of the SiH free radical have been detected in a silane plasma discharge. In addition to fundamental band transitions some hot band lines have been identified from predictions derived from optical and FTIR data. Low Q-branch transitions in both 2Π1/2 and 2Π3/2 states of the fundamental have been accurately measured and incorporated in a new set of predictions based on the present work and earlier FTIR data.