Physical Review B · 2007 · 120 citations · 38 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsAb Initio MethodsDensity Functional TheoryElectron-phonon InteractionsElectronic Band StructureSemiconductor PhysicsStress-strain BehaviorAb Initio CalculationsAnharmonic Effects In SolidsElastic ConstantsGallium Nitride (Gan) MaterialsStrain EffectsStrain RelationsStress RelationsStress-strain Relations
We present theoretical studies for the third-order elastic constants ${C}_{ijk}$ in zinc-blende nitrides AlN, GaN, and InN. Our predictions for these compounds are based on detailed ab initio calculations of strain-energy and strain-stress relations in the framework of the density functional theory. To judge the computational accuracy, we compare the ab initio calculated results for ${C}_{ijk}$ with experimental data available for Si and GaAs. We also underline the relation of the third-order elastic constants to other quantities characterizing anharmonic behavior of materials, such as pressure derivatives of the second-order elastic constants ${c}_{ij}^{\ensuremath{'}}$ and the mode Gr\"uneisen constants for long-wavelength acoustic modes $\ensuremath{\gamma}(\mathbf{q},\mathbf{j})$.
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Generalized Gradient Approximation Made Simple
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