Publication | Closed Access
Optical constants of n‐ and p‐type GaAs between 2.5 and 3.5 eV
13
Citations
6
References
1978
Year
Optical MaterialsEngineeringP‐type GaasLaser ApplicationsOptoelectronic DevicesOptical CharacterizationSemiconductorsOptical PropertiesCompound SemiconductorAbsorption CoefficientSemiconductor TechnologyPhotonicsElectrical EngineeringPhysicsOptoelectronic MaterialsSemiconductor MaterialNormal Incidence ReflectanceRoom TemperatureApplied PhysicsOptoelectronicsOptical Constants
Abstract The normal incidence reflectance for n‐ and p‐type GaAs is measured at room temperature in the spectral range from 1.2 to 3.8 eV. Using Kramers‐Kronig analysis, the values of the refractive index and absorption coefficient for n‐ and p‐type GaAs are determined from the reflectance data in the spectral range from 2.5 to 3.5 eV. The results obtained show that the optical‐constant spectra depend on impurity concentration in the spectral range investigated.
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