Publication | Closed Access
Switching and memory phenomena in Langmuir–Blodgett films
76
Citations
11
References
1988
Year
Memory PhenomenaEngineeringEmerging Memory TechnologyThin Film Process TechnologySemiconductorsElectronic DevicesMemory DeviceMemory DevicesThin Film ProcessingMaterials ScienceLb FilmsElectronic MemoryElectronic MaterialsLb Films ConsistSurface ScienceApplied PhysicsReproducible Memory SwitchingSemiconductor MemoryThin Films
Reproducible memory switching has been observed in metal/ Langmuir–Blodgett (LB) film/metal sandwich structures: LB films consist of organic molecules such as dyes having a number of conjugated bonds. The device switches from a nonconducting off state to a conducting on state via an intermediate state, and it switches directly from the on to the off state within less than 10 ns upon the application of a voltage. Both off-state and on-state resistances of the device depend linearly on the number of monolayers, the conduction being predominantly through the LB films.
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