A New Insight Into Correlation Between DC And AC Hot-carrier Degradation Of MOS Devices

Abstract

Experimental comparison of DC and AC hot-carrier stress results suggest no indication of AC enhancement in digital circuits. Hot-carrier degradation behaviors of low and high-trap density oxides are compared to show that steep frequency degradation can be associated with high-trap density oxides. DC saturation drain current change can adequately explain such steep frequency degradation and is a better monitor for hot-carrier lifetime.