Electron Spin Resonance Study of Interface Trap States and Charge Carrier Concentration in Rubrene Single-Crystal Field-Effect Transistors

Abstract

Field-induced charge carriers at the semiconductor/dielectric interface of rubrene single-crystal field-effect transistors (RSC-FETs) were studied by ESR. We fabricated bottom-contact RSC-FETs to be used for ESR measurements by laminating RSCs onto SiO2 and polymer/SiO2 gate dielectric surfaces. The observed ESR spectra depict a minimal dependence on gate voltage, whose result is in sharp contrast to those obtained using RSC-FETs fabricated by the deposition of a parylene C gate dielectric. This behavior indicates that few deep trap levels are generated by the lamination technique. The dependence of ESR intensity on drain voltage was also investigated using gradual channel approximation.