Pressure dependence of threshold current in Ga _<i>x</i> In _{1− <i>x</i>} As _<i>y</i> P _{1− <i>y</i>} lasers

Abstract

The threshold current in 20 μm stripe GaxIn1−xAsyP1−y lasers operating at 1.3 μm wavelength decreases with increasing pressure, whereas the opposite effect occurs in lasers made of Ga1−xAlxAs The magnitude of the change observed in quaternary lasers is consistent with the presence of intervalence band absorption or Auger recombination, but not with the other mechanisms considered.