Concepedia

Proximity getterihg by MeV-implantation of carbon: microstructure and carrier lifetime measurements

W. Skorupa, R. Kögler, K. Schmalz, H. Bartsch

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1991 · 27 citations · 3 references

DOI

Concepts

References

3

Proximity gettering with mega-electron-volt carbon and oxygen implantations

Hiu Yung Wong, N.W. Cheung, Paul K. Chu et al. · Applied Physics Letters · 1988 · 164 citations

, , +14

Buried dopant and defect layers for device structures with high-energy ion implantation

N.W. Cheung, C. L. Liang, B.K. Liew et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1989 · 48 citations

, , +16

Irradiation defects and the electrical quality of ion implanted silicon

Donna E. Davies, S. Roosild · Solid-State Electronics · 1971 · 20 citations

, , +14