Cubic boron nitride films grown by low energy B+ and N+ ion beam deposition

Abstract

We have studied the growth and the properties of BN films prepared by exclusive deposition of mass separated 11B+ and 14N+ ions. BN films grown with ion energies of 500 eV and at substrate temperatures of 350 °C show the IR absorption peak at 1080 cm−1, characteristic for c-BN. These films are nearly stoichiometric and, with transmission electron diffraction, the presence of c-BN nanocrystals was revealed. We compare the growth conditions for ion beam deposition on BN, CN, and diamondlike carbon and propose that the nucleation of nanocrystalline c-BN is related to the ionicity of the BN bond.